IRG4BC10UD |
RFQ for IRG4BC10UD Required Field |
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| Technical/Catalog Information | IRG4BC10UD |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 8.5A |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 5A |
| Power - Max | 38W |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 (TO-220AB, Straight Leads) |
| Packaging | Bulk |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRG4BC10UD IRG4BC10UD |
| Product | Manufacturers | Pack | D/C |
| IRG4BC10UD | - | TO-220 | 07+ |
Features |
| • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous Generation• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations• Industry standard TO-220AB package |
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 600 | V |
| IC @ TC = 25 | Continuous Collector Current | 8.5 | A |
| IC @ TC = 100 | Continuous Collector Current | 5.0 | |
| ICM | Pulsed Collector Current | 34 | |
| ILM | Clamped Inductive Load Current | 34 | |
| IF @ TC = 100 | Diode Continuous Forward Current | 4.0 | |
| IFM | Diode Maximum Forward Current | 16 | |
| VGE | Gate-to-Emitter Voltage | ±20 | V |
| PD @ TC = 25 | Maximum Power Dissipation | 38 | W |
| PD @ TC = 100 | Maximum Power Dissipation | 15 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 | |
| Soldering Temperature, for 10 sec. | 300 (0.063 in. (1.6mm) from case) | ||
| Mounting Torque, 6-32 or M3 Screw. | 10 lbf•in (1.1 N•m) |
